md75s18m4 document number: s-m0026 www. apt-semi .com rev.1.0, may.31, 2013 1 module type type v rrm v rsm MD75S08M4 md75s12m4 md75s16m4 md75s18m4 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v maximum ratings symbol conditions values units i d three phase, full wave tc=110 75 a i fsm t=10ms tvj =45 750 a i 2 t t=10ms tvj =45 2800 a 2 s v isol a.c.50hz;r.m.s.;1min 3000 v t vj -40 to +150 t stg -40 to +125 mt to terminals(m5) 515% nm ms to heatsink(m5) 515% nm weight module (approximately) 146 g thermal characteristics symbol conditions values units rth(j-c) per diode 1.1 /w rth(c-s) module (approximately) 0.07 /w electrical characteristics circuit glass passivated three phase rectifier bridge v rrm 800 to 1800v i d 75 a features y three phase bridge rectifier y blocking voltage:800 to 1800v y heat transfer through aluminum oxide dbc ceramic isolated metal baseplate y glass passivated chip applications y three phase rectifiers for power supplies y rectifiers for dc motor field supplies y battery charger rectifiers y in p ut rectifiers for variable fre q uenc y drives symbol conditions values units min. typ. max. v fm t=25 i f =150a 1.38 1.50 v i rd t vj =25 v rd =v rrm t vj =150 v rd =v rrm 0.3 5 ma ma - + ~ ~ ~
md75s18m4 document number: s-m0026 www. apt-semi .com rev.1.0, may.31, 2013 2 performance curves fig1. forward characteristics fig3. transient thermal impedance fi g 2. power dissi p ation fig4. max non-repetitive forward surge current fig5.forward current derating curve z th(j- c ) 0 v f 0.5 1.0 1.5 v 2.0 1 10 cycles 100 0 tc 50 100 150 0.001 0.01 0.1 1.0 10 s 100 0 i d 40 a 80 50hz 200 a 150 100 50 i f 0 25 - - - 125 max. typ. 170 w 85 p vtot 0 1500 a 1000 500 0 1.5 / w 1.0 0.5 0 100 a 80 60 40 20 i d 0
md75s18m4 document number: s-m0026 www. apt-semi .com rev.1.0, may.31, 2013 3 package outline information case m4 dimensions in mm
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